Semiconductor integrated device comprising a plurality of basic cells

摘要

A plurality of first basic cells and a plurality of second basic cells are formed on a semiconductor substrate. A gate electrode of each of transistors in the first basic cell has a gate length of the minimum size. A gate electrode of each of transistors in the second basic cell has a second gate length larger than the first gate length. The transistors in the first basic cell are connected to each other, to construct a circuit which is operable at high speed and can be increased in integration density. The transistors in the second basic cell are connected to each other, to construct a circuit which can be reduced in power consumption and is hardly affected by process variations.