| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device by which defects are not easily generated, increase of manufacturing cost is suppressed, and threshold voltages (Vth) of a D-type FET and an E-type FET can be reproduced with a good repeatability on the same substrate. SOLUTION: This manufacturing method comprises a first process of forming ohmic electrodes 5a, 5b on a semiconductor substrate (1, 2, 3, 4), a second process of forming a resist 10 all over the semiconductor substrate, including the ohmic electrode 5a, 5b, a third process of forming openings 6a, 6b and 6c on the ohmic electrodes 5a and 5b and on the gate forming part between the ohmic electrodes 5a, 5b on an active layer in the resist 10, a fourth process of etching the active layer 3 of which the surface is exposed by forming the opening 6c, and a fifth process of forming a gate electrode 8 on the active layer 3 which is etched for a predetermined depth.
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