Semiconductor device including a depletion type lateral mosfet and method of forming the same

摘要

The present invention provides a channel region of a depletion type lateral field effect transistor. The channel region of a first conductivity type is selectively provided in a semiconductor region of a second conductivity type, and the channel region underlies a gate insulating film, wherein an interface of the channel region to the gate insulating film lies at a lower level than an upper surface of the semiconductor region.