发明名称 |
Method for producing a semiconductor-metal contact through a dielectric layer |
摘要 |
A method of electrically contacting a semiconductor layer ( 13 ) coated with at least one dielectic layer ( 12 ) which is coated with a metal layer the metal layer ( 11 ) is applied on the dielectric layer ( 12 ) and the metal layer ( 11 ) is temporarily locally heated in a line, linear or dotted pattern by means of a source of radiation ( 9 ) in a controlled manner in such a way that a local molten mixture, is formed consisting exclusively of the metal layer ( 11 ), the dielectric layer ( 12 ) and the semiconductor layer ( 13 ) are located directly underneath the metal layer ( 11 ) and upon solidification, leads to an electrical contact between the semiconductor layer ( 13 ) and the metal layer ( 11 ). |
申请公布号 |
AU9181201(A) |
申请公布日期 |
2002.04.02 |
申请号 |
AU20010091812 |
申请日期 |
2001.08.30 |
申请人 |
FRAUNHOFER-GESELLSCHAFT ZUR FORDERUNG DER ANGEWANDTEN FORSCHUNG |
发明人 |
RALF PREU;ERIC SCHNEIDERLOCHNER;STEFAN GLUNZ;RALF LUDEMANN |
分类号 |
H01L31/04;H01L21/00;H01L21/28;H01L21/324;H01L21/42;H01L31/0224;H01L31/18 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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