SELF-OSCILLATING SEMICONDUCTOR LASER ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide an AlGaInP- or GaInAsP-based self-oscillating semiconductor laser element having a low-noise characteristic. SOLUTION: This self-oscillating semiconductor laser is provided with an n-AlGaInP clad layer 3, a strained MQW active layer 4, and a p-AlGaInP clad layer 5 on a substrate 1 in this order. Strained quantum well saturable absorption layers 6 is formed in the clad layers 3 and 5.