| 摘要 |
<p>A recessed metal interconnect (20) is formed by depositing a dielectric layer (18) on a substrate and forming a trench (12) in the dielectric layer (18). A metal interconnect (20) is electrode positioned in the trench (12). The polarity of the electrode position bath is then reversed to recess the metal interconnect (20). The interconnect (20) is covered with diffusion barrier layer (50) aligned with the trench (12). The trench (12) and the remaining portion of the dielectric layer (18) are then capped with a passivating layer (60). The trench-aligned diffusion barrier (50) layer prevents metal diffusion into the passivating layer (60).</p> |
