发明名称 |
METHOD FOR CONTROLLING POLISHING TIME OF WAFER BY USING ALGORITHM OF SAMPLE SKIP METHOD AND METHOD FOR POLISHING WAFER USING THE SAME |
摘要 |
PURPOSE: A method for controlling polishing time of a wafer by using an algorithm of a sample skip method is provided to effectively reduce a variation of an elimination rate occurring between heads, by forming a plurality of heads so that a variation scope between lots is minimized. CONSTITUTION: A chemical mechanical polishing(CMP) process is performed regarding a plurality of wafers constituting the n-th lot among a plurality of lots for an interval of delta t(n) so that delta ToxP(n), the eliminated quantity of a polishing layer is obtained. RRb(n), the elimination rate of the polishing layer regarding a blanket wafer is obtained from delta ToxP(n). The CMP time, delta(n+1) regarding a wafer in the (n+1)-th lot is obtained from delta ToxT(n+1), the target quantity of the polishing layer eliminated from the wafer in the (n+1)-th lot while using a relational expression, delta t(n+1)=(delta ToxT(n+1)+A)/RRb(n) where A is a constant.
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申请公布号 |
KR20020022424(A) |
申请公布日期 |
2002.03.27 |
申请号 |
KR20000055205 |
申请日期 |
2000.09.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HA, SANG ROK;LEE, JAE DONG;YANG, GYEONG MO;YOON, BO EON |
分类号 |
H01L21/304;B24B49/02;H01L21/302;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/304 |
代理机构 |
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地址 |
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