发明名称 |
Method and device for compensating wafer bias in a plasma processing chamber |
摘要 |
Disclosed is a method and device for compensating a bias voltage on a wafer disposed over an electrostatic chuck in a processing chamber of a plasma processing system. The plasma processing system includes an electrostatic and RF power supplies that are coupled to the electrostatic chuck. The bias compensation device includes a voltage converter, a storage unit, and a voltage adjusting circuitry. The voltage converter is coupled to the electrostatic chuck for detecting a voltage Vpp of the electrostatic chuck. The voltage converter converts the detected voltage to a lower voltage Vref. The storage unit stores a predetermined slope and a predetermined offset of a calibration curve, which is derived by fitting a plurality of wafer bias voltages as a function of electrostatic chuck voltages.
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申请公布号 |
US6361645(B1) |
申请公布日期 |
2002.03.26 |
申请号 |
US19980169017 |
申请日期 |
1998.10.08 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
SCHOEPP ALAN M.;KNOP ROBERT E.;OLSON CHRISTOPHER H.;BARNES MICHAEL S.;NGO TUAN M. |
分类号 |
H01L21/302;H01L21/3065;H01L21/683;H02N13/00;(IPC1-7):H02N13/00 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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