| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce on-resistance and to improve breakdown-strength. SOLUTION: A trench 15 is formed from the surface of a source layer 14 into the semiconductor substrate 11 through a well layer 13 and a drift layer 12. An embedded electrode 17 is formed in a region from the drift layer 12 to the semiconductor substrate 11, in the trench 15, through a first insulating film 16. A gate electrode 19 which is electrically insulated from the embedded electrode 17 is formed in the region from the source layer 14 to the drift layer 12 by way of the well layer 13, in the trench 15, through a second insulating film 18.</p> |
