CHEMICALLY AMPLIFIED SHORT WAVELENGTH RESIST

摘要

A resist capable of imaging by exposure to radiation having a wave length of about 157 nm includes an imagewise convertible film-forming polymer substituted with at least one chemical functional deblocking group cleavable under acid-catalyzed baking conditions to form polar groups imparting solubility of the deblocked polymer in aqueous alkaline developer. At least one photo acid generator compound releases an acid upon exposure to radiation and catalyzes the cleavage of the deblocking groups. An effective amount of at least one radical scavenger compound is used to minimize reactions decreasing the solubility of the deblocked polymer in aqueous alkaline developer. At least one solvent is also provided.