发明名称 |
Method and apparatus for use in manufacturing a semiconductor device |
摘要 |
In a semiconductor device manufacturing method for processing a plurality of substrates by alternately repeating a pretreatment stage and a continuous substrate processing stage, the continuous substrate processing stage comprises the steps of: loading a substrate on a heater unit located at a substrate loading/unloading position, the heater unit supporting and heating the substrate; processing the loaded substrate after transferring the heater unit having thereon the loaded substrate to a substrate processing position; unloading the processed substrate; and repeating the loading step, the processing step and the unloading step until a set of substrates are processed, and wherein the pretreatment stage is carried out by maintaining the heater unit between the substrate loading/unloading position and the substrate processing position.
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申请公布号 |
US2002034862(A1) |
申请公布日期 |
2002.03.21 |
申请号 |
US20010924538 |
申请日期 |
2001.08.09 |
申请人 |
HITACHI KOKUSAI ELECTRIC, INC. |
发明人 |
WADA TETSUYA;MIYATA TOSHIMITSU;NISHITANI EISUKE |
分类号 |
C23C16/44;C23C16/40;C23C16/455;C23C16/46;C23C16/54;H01L21/00;H01L21/205;H01L21/285;H01L21/31;(IPC1-7):H01L21/20 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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