发明名称 Method and apparatus for use in manufacturing a semiconductor device
摘要 In a semiconductor device manufacturing method for processing a plurality of substrates by alternately repeating a pretreatment stage and a continuous substrate processing stage, the continuous substrate processing stage comprises the steps of: loading a substrate on a heater unit located at a substrate loading/unloading position, the heater unit supporting and heating the substrate; processing the loaded substrate after transferring the heater unit having thereon the loaded substrate to a substrate processing position; unloading the processed substrate; and repeating the loading step, the processing step and the unloading step until a set of substrates are processed, and wherein the pretreatment stage is carried out by maintaining the heater unit between the substrate loading/unloading position and the substrate processing position.
申请公布号 US2002034862(A1) 申请公布日期 2002.03.21
申请号 US20010924538 申请日期 2001.08.09
申请人 HITACHI KOKUSAI ELECTRIC, INC. 发明人 WADA TETSUYA;MIYATA TOSHIMITSU;NISHITANI EISUKE
分类号 C23C16/44;C23C16/40;C23C16/455;C23C16/46;C23C16/54;H01L21/00;H01L21/205;H01L21/285;H01L21/31;(IPC1-7):H01L21/20 主分类号 C23C16/44
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