| 摘要 |
<p>PURPOSE: To provide a method for manufacturing a semiconductor device which can contrive a high throughput and a fine pitching with a low price, improved humidity resistance and high reliability. CONSTITUTION: This method comprises the steps of: forming a Ni bump 6 with an electroless plating in an opening part 3a of a protection film 3 having insulation properties formed on an electrode pad 2 provided on a semiconductor substrate 1; and eliminating a plating solution residue 8 remaining in a gap 7 between the Ni bump 6 and the protection film 3. The plating solution residue 8 is eliminated by cleaning with a cleaning fluid containing a hydrogen peroxide, or by applying ultrasonic waves in the cleaning fluid such as pure water, or the like.</p> |
