发明名称 ULTRAFINE STRUCTURE AND ITS METHOD OF MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing an ultrafine structure by which ultra refinement and high density is realized with a high throughput. SOLUTION: This method for manufacturing an ultrafine structure is provided with a step of selectively forming linear active areas ST in which dangling bond remains by supplying Ag which is combined with the dangling bond onto a Si (111) 7×7 substrate having dangling bond, a step of forming a one- dimensional molecular mask in the active areas ST by depositing fullerene C6031 and combining it with the remaining dangling bond, a step of growing an amorphous silicon layer 41 whose force of combining with the fullerene C6031 is far smaller than its force of mutual combination and a step of exposing the fullerene C6031 by activating the amorphous silicon layer 41 and moving it between areas of the one-dimensional molecular mask.
申请公布号 JP2002075863(A) 申请公布日期 2002.03.15
申请号 JP20000265572 申请日期 2000.09.01
申请人 INST OF PHYSICAL & CHEMICAL RES 发明人 NAKAYAMA TOMONOBU;ONOE JUN;TAKEUCHI KAZUO;AONO MASAKAZU
分类号 H01L21/20;H01L21/203;(IPC1-7):H01L21/20 主分类号 H01L21/20
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