发明名称 |
ULTRAFINE STRUCTURE AND ITS METHOD OF MANUFACTURE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing an ultrafine structure by which ultra refinement and high density is realized with a high throughput. SOLUTION: This method for manufacturing an ultrafine structure is provided with a step of selectively forming linear active areas ST in which dangling bond remains by supplying Ag which is combined with the dangling bond onto a Si (111) 7×7 substrate having dangling bond, a step of forming a one- dimensional molecular mask in the active areas ST by depositing fullerene C6031 and combining it with the remaining dangling bond, a step of growing an amorphous silicon layer 41 whose force of combining with the fullerene C6031 is far smaller than its force of mutual combination and a step of exposing the fullerene C6031 by activating the amorphous silicon layer 41 and moving it between areas of the one-dimensional molecular mask.
|
申请公布号 |
JP2002075863(A) |
申请公布日期 |
2002.03.15 |
申请号 |
JP20000265572 |
申请日期 |
2000.09.01 |
申请人 |
INST OF PHYSICAL & CHEMICAL RES |
发明人 |
NAKAYAMA TOMONOBU;ONOE JUN;TAKEUCHI KAZUO;AONO MASAKAZU |
分类号 |
H01L21/20;H01L21/203;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|