发明名称 ANNEALER, PLATING SYSTEM, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an annealer that can prevent even the minute contamination of an object to be treated and can uniformly anneal the object, and to provide a plating system and a method of manufacturing semiconductor device. SOLUTION: The annealer has an upward wall which transmits a heat ray, a downward wall which also transmits a heat ray, a quartz wall having an opening for carrying in/out the object to be treated and an internal treatment chamber, and a heat insulating member which is installed to the internal treatment chamber of the quartz wall to surround the horizontal periphery of the object placed on a susceptor and insulates the heat radiated from a first or second thermal radiation lamp unit. Since the treatment chamber for annealing is constituted of quartz, the thermal stability of the chamber is extremely high and the diffusion of contaminants can be prevented to a high degree. In addition, since the heat is radiated to the object from the upside and downside and the heat insulating member exists around the object in the circumferential direction of the object, the temperature uniformity of the object during annealing is improved.
申请公布号 JP2002075901(A) 申请公布日期 2002.03.15
申请号 JP20000263689 申请日期 2000.08.31
申请人 TOKYO ELECTRON LTD 发明人 OKASE WATARU;MATSUO TAKENOBU
分类号 C25D7/12;H01L21/26;H01L21/288;(IPC1-7):H01L21/26 主分类号 C25D7/12
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