SEMICONDUCTOR DEVICE, SEMICONDUCTOR SUBSTRATE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a structure of a field effect transistor for realizing an integrated circuit capable of remarkably reducing a power consumption and rapidly operating as compared with an integrated circuit constituted of a conventional Si-MOSFET. SOLUTION: A substrate 5 is obtained by forming an insulating film 2 on a supporting base 1 and laminating an SiGe buffer layer 3 (first semiconductor layer) of a high Ge composition of 30 atm.% or more and a channel layer (second semiconductor layer) made of an SiGe layer containing more Ge than that of the Ge layer or the first semiconductor layer on the film 2. A source region and a drain region 6 are formed on the substrate 5, and connected to a source electrode (not shown) and a drain electrode (not shown), respectively.