| 摘要 |
PURPOSE: A SEMICONDUCTOR device and a manufacturing method thereof are provided to solve the problem that driving current does not flow fully because of temperature rise of IC chip at driving. CONSTITUTION: Conducting patterns(11A-11D) are buried in insulating resin(10) to be formed, and a conducting foil(20) is subjected to half etching to be formed, so that thickness of a semiconductor device can be reduced sufficiently. Since an electrode(11D) for heat dissipation is arranged, a semiconductor device excellent in heat dissipating property can be provided. Furthermore, by arranging a solder electrode(11E) for relieving stress, stress generated on external connection electrodes(11C) positioned in peripheral parts can be relieved, and generation of cracks can be prevented. |
