发明名称 |
Semiconductor device having electrostatic protection circuit and method of fabricating the same |
摘要 |
A semiconductor device including an electrostatic protection circuit capable of preventing current from being concentrated in a hot spot through a silicide layer. A plurality of salicide N-type MOS transistors isolated by a first diffusion region are formed on a semiconductor substrate of this semiconductor device. An NPN lateral bipolar transistor and a Zener diode are formed as an electrostatic protection circuit for these MOS transistors. The NPN lateral bipolar transistor includes a P-type well and a second diffusion region which is formed in a region isolated by two second isolation regions. The Zener diode is formed by the PN junction between the first diffusion region of the MOS transistor and a third diffusion region. The breakdown start voltage of the Zener diode is set to be lower than the breakdown start voltage of the MOS transistor. A fourth diffusion region which makes up a Schottky diode together with the silicide layer is further provided between the silicide layer and the third diffusion region.
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申请公布号 |
US2002030231(A1) |
申请公布日期 |
2002.03.14 |
申请号 |
US20010866800 |
申请日期 |
2001.05.30 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
OKAWA KAZUHIKO;SAIKI TAKAYUKI |
分类号 |
H01L27/04;H01L21/822;H01L21/8238;H01L27/02;H01L27/092;(IPC1-7):H01L23/62 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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