WAVELENGTH-SELECTIVE PN TRANSITION PHOTODIODE

摘要

The invention relates to a particularly narrow-band photodiode, whereby a photoelectrically active layer (3, 20) and the layers thereof abut against different layers on the two surface sides thereof. A photoelectric stop filter layer (4, 22) for shorter-wave radiation of monolithically integrated semiconductor material is formed on the radiation-exposed side of the photoelectrically active layer (3, 20). The energy band gap (EGA(x)) of said stop filter layer is provided with a greater value than the energy band gap (EGB(x)) in the directly adjacent layers of the photoelectrically active layer (3, 20) and the remaining side is sealed by means of a hetero transition between a substrate (1) or a buffer layer (2) being situated above said substrate (1) and the photoelectrically active layer (3, 20) with band discontinuity within the appurtenant energy band of the moveable minority carriers, whereby said discontinuity forms an access barrier ( DELTA B) for minority carriers of the substrate (1). As a result thereof, minority charge carriers of the substrate (1) or the buffer layer (2) cannot reach the photoelectrically active layer (3, 20).