发明名称 SILICON BOAT WITH PROTECTIVE FILM, METHOD OF MANUFACTURE THEREOF, AND SILICON WAFER HEAT-TREATED USING SILICON BOAT
摘要 <p>A silicon boat for supporting a silicon wafer during a heat treatment of the wafer, wherein a protective film consisting of a thermal oxide film is directly formed on a surface of the boat. A silicon boat is left in argon, hydrogen or a mixed gas of argon and hydrogen within a temperature range of 1000 DEG C or higher for 10 minutes or more to remove a native oxide film on the surface of the boat and then subjected to a heat treatment in an atmosphere containing oxygen to grow a protective film consisting of an oxide film on the surface of the boat. By using this silicon boat, silicon wafers are subjected to a heat treatment in an atmosphere consisting of argon or a mixed gas of argon and hydrogen. Thus, there are provided a boat for heat treatment of wafer and a method for heat treatment, of wafer, in which metal contamination is not caused in the wafer, and falling off of the protective film, damage of the wafer surface and generation of particles are prevented. &lt;IMAGE&gt;</p>
申请公布号 EP1187189(A1) 申请公布日期 2002.03.13
申请号 EP20010902833 申请日期 2001.02.09
申请人 SHIN-ETSU HANDOTAI CO., LTD 发明人 KOBAYASHI, NORIHIRO;AKIYAMA, SHOJI;TAMATSUKA, MASARO;SHINOMIYA, MASARU
分类号 H01L21/673;(IPC1-7):H01L21/324 主分类号 H01L21/673
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