发明名称 |
Device for depositing especially, crystalline layers on one or more substrates, especially substrates which are also crystalline |
摘要 |
A device for depositing crystalline layers onto one or more substrates in a process chamber, including: a reverse-heatable support plate which forms a wall of the process chamber and which is heated with a high frequency and is formed of inertly coated graphite; a gas inlet mechanism which is located in the center of the process chamber having a cover plate that is situated at a distance from the support plate; and a gas outlet ring formed of solid graphite which forms the outer limit of the process chamber and which has a plurality of radial gas outlets. |
申请公布号 |
AU1212502(A) |
申请公布日期 |
2002.03.13 |
申请号 |
AU20020012125 |
申请日期 |
2001.08.01 |
申请人 |
AIXTRON AG |
发明人 |
HOLGER JURGENSEN;GERD STRAUCH;JOHANNES KAPPELER |
分类号 |
C23C16/455;C23C16/44;C30B25/14;H01L21/205 |
主分类号 |
C23C16/455 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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