发明名称 Device for depositing especially, crystalline layers on one or more substrates, especially substrates which are also crystalline
摘要 A device for depositing crystalline layers onto one or more substrates in a process chamber, including: a reverse-heatable support plate which forms a wall of the process chamber and which is heated with a high frequency and is formed of inertly coated graphite; a gas inlet mechanism which is located in the center of the process chamber having a cover plate that is situated at a distance from the support plate; and a gas outlet ring formed of solid graphite which forms the outer limit of the process chamber and which has a plurality of radial gas outlets.
申请公布号 AU1212502(A) 申请公布日期 2002.03.13
申请号 AU20020012125 申请日期 2001.08.01
申请人 AIXTRON AG 发明人 HOLGER JURGENSEN;GERD STRAUCH;JOHANNES KAPPELER
分类号 C23C16/455;C23C16/44;C30B25/14;H01L21/205 主分类号 C23C16/455
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