发明名称 Wiring through terminal via fuse
摘要 A semiconductor device, in accordance with the present invention, includes a plurality of fuses disposed on a same level in a fuse bank. A plurality of conductive lines are routed through the fuse bank in between the fuses. A terminal via window is formed in a passivation layer over the plurality of conductive lines and over the plurality of fuses, the terminal via window being formed to expose the fuses in the fuse bank.
申请公布号 US6355968(B1) 申请公布日期 2002.03.12
申请号 US20000638722 申请日期 2000.08.10
申请人 INFINEON TECHNOLOGIES AG 发明人 LEHMANN GUNTHER;BRINTZINGER CHRISTOPH
分类号 H01L23/525;(IPC1-7):H01L29/00 主分类号 H01L23/525
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