| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to simplify a fabricating process, by activating impurity ions implanted by a BN ions implantation process during an oxidation process for forming a BN oxide layer so that a BN junction region is simultaneously formed. CONSTITUTION: After a nitride layer is formed on a semiconductor substrate(21), photoresist is applied on the entire surface. The photoresist is selectively patterned to define a BN junction region(25) and to selectively etch the nitride layer. The photoresist is eliminated and a high temperature low pressure dielectric(HLD) oxide layer is formed. The HLD oxide layer is etched-back to form an HLD sidewall on the side surface of the nitride layer. A BN impurity implantation process is performed by using the nitride layer including the HLD sidewall as a mask. The HLD sidewall is removed, and the BN oxide layer(26) is formed by using the nitride layer as a mask.
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