| 摘要 |
PURPOSE: A sputtering apparatus is provided to reduce the number of times for stopping the sputtering apparatus according to the number of times for replacing a target, by performing a thin film process while using a backing plate structure. CONSTITUTION: A chamber maintains a vacuum state. A fix unit fixes a substrate, installed in the chamber. A height control unit controls the fix unit so that the fix unit can go up and down. A target fix unit fixes the target(149) as a thin film material deposited on the substrate. An etch groove is formed in a position corresponding to a portion of the fixed target where corrosion occurs most severely. The same material(149') as the target is filled in the target fix unit which shows a cathode. A cathode plate is formed under the target fix unit. A plasma inductive material induces plasma, installed near the target fix unit. A magnet generates a magnetic field, installed near the target fix unit.
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