| 摘要 |
PURPOSE: An electrostatic discharge(ESD) protection circuit of a semiconductor device is provided to improve capacity by forming a stable resistor in a shortened drain contact to gate(DCG) space, and to reduce the size of an input/output protection circuit by making a DCG dimension of the ESD circuit smaller according to a design rule. CONSTITUTION: An isolation region and an active region are defined by an isolation layer in a semiconductor substrate(20) of the first conductivity type. A well(21) of the first conductivity type is formed on the active region of the semiconductor substrate. A gate is formed on the well of the first conductivity type, dividing the active region into a drain formation region and a source formation region and interposing a gate insulation layer. The first doping region(26) of the second conductivity type, a doping region(27) of the first conductivity type and the second doping region(28) of the second conductivity type are sequentially and laterally formed on the well in the drain region from the isolation layer to the gate. The third doping region(29) of the second conductivity type is formed on the substrate in the source region.
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