| 摘要 |
PURPOSE: A semiconductor memory device is provided to preventing an operating speed from being lowered owing to increase in a bank number by dividing a bank with an input/output sense amplifier array interposed therebetween. CONSTITUTION: A plurality of banks(21, 22, 23, 24) are placed at upper and lower parts of an input/output sense amplifier/write driver array. A plurality of global input/output lines(gio<0>-gio<n>) and (giob<0>-giob<n>) are connected to bit line sense amplifier blocks(25) of each bank. A plurality of switches(31) are placed between the input/output sense amplifier/write driver array and upper and lower banks adjacent to the array. The switches activate global input/output lines at an operating bank and inactivate global input/output lines at a non-operating bank.
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