发明名称 Wärmeabführendes Bauteil und damit versehene Halbleitervorrichtung
摘要 Disclosed herein is a semiconductor laser provided with a heat radiating component which is improved in heat radiating property. The semiconductor laser comprises a heat radiating component for radiating heat which is generated in operation. In this heat radiating component, a polycrystalline diamond layer (3) synthesized by vapor deposition is formed on the upper surface of a stem (4). A semiconductor laser element (1) is brazed/bonded onto the surface of the vapor-deposited polycrystalline diamond layer (3) through a brazing filler metal (2). Also disclosed herein is a heat radiating component having a thermal expansion coefficient being coincident to that of an LSI chip to be mounted thereon, which is excellent in heat radiating property. <IMAGE>
申请公布号 DE69231790(T2) 申请公布日期 2002.03.07
申请号 DE1992631790T 申请日期 1992.06.26
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 NAKAMURA, TSUTOMO;IGUCHI, TAKAHISA;NAKAI, TETSUO
分类号 H01L23/373;H01L23/433;H01L23/495 主分类号 H01L23/373
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