发明名称 |
Wärmeabführendes Bauteil und damit versehene Halbleitervorrichtung |
摘要 |
Disclosed herein is a semiconductor laser provided with a heat radiating component which is improved in heat radiating property. The semiconductor laser comprises a heat radiating component for radiating heat which is generated in operation. In this heat radiating component, a polycrystalline diamond layer (3) synthesized by vapor deposition is formed on the upper surface of a stem (4). A semiconductor laser element (1) is brazed/bonded onto the surface of the vapor-deposited polycrystalline diamond layer (3) through a brazing filler metal (2). Also disclosed herein is a heat radiating component having a thermal expansion coefficient being coincident to that of an LSI chip to be mounted thereon, which is excellent in heat radiating property. <IMAGE> |
申请公布号 |
DE69231790(T2) |
申请公布日期 |
2002.03.07 |
申请号 |
DE1992631790T |
申请日期 |
1992.06.26 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
NAKAMURA, TSUTOMO;IGUCHI, TAKAHISA;NAKAI, TETSUO |
分类号 |
H01L23/373;H01L23/433;H01L23/495 |
主分类号 |
H01L23/373 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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