| 摘要 |
A vertical replacement gate (VRG) transistor structure comprises first source/drain region (110) on substrate (105), conductive layer (120) adjacent and electrically connected to the first source/drain region (110), second source/drain region (650) located over the first source/drain region (110), and conductive channel (605) extending between two source/drain regions (110, 650). The VRG transistor may have gate (610) located over conductive layer (120), dielectric regions (510) of silicon dioxide located between conductive layer (120) and conductive channel (605), and insulating regions (140,180) located between conductive layer (120) and gate (610), and between gate (610) and second source/drain region (650). The conductive layer (120) may be a metal silicide. The VRG transistor may be used in an integrated circuit structure connected to lateral transistors by interconnects formed in interlevel dielectric layers. The VRG transistor operates by a current (680) moving from conductive layer (120), through first source/drain region (110) and up conductive channel (605) to second source/drain region (650). |
