Ion implanted junctions in silicon wafers,申请号GB20020000879-传众专利搜索

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发明名称	Ion implanted junctions in silicon wafers
摘要
申请公布号	GB0200879(D0)	申请公布日期	2002.03.06
申请号	GB20020000879	申请日期	2002.01.16
申请人	UNIVERSITY OF SURREY, THE	发明人
分类号	H01L21/265;H01L21/336	主分类号	H01L21/265
代理机构		代理人
主权项
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