发明名称 Thin-film formation system and thin-film formation process
摘要 <p>In a thin-film formation process and system, a target and a substrate are placed in a sputtering space and a film-forming space, respectively, the pressure in the film-forming space is maintained at a pressure lower than the pressure in the sputtering space and a pressure sufficient for sputtered particles to move in the film-forming space with their mean free path which is longer than the distance between the grid plate and the substrate, and the target is sputtered to form a thin film on the substrate. &lt;IMAGE&gt;</p>
申请公布号 EP1184483(A2) 申请公布日期 2002.03.06
申请号 EP20010120484 申请日期 2001.08.28
申请人 CANON KABUSHIKI KAISHA 发明人 IWASE, HIDEO;KAMEYAMA, MAKOTO;KITANI, KOJI;HOSHI, YOICHI
分类号 C23C14/34;C23C14/35;H01L21/203;H01L21/285;(IPC1-7):C23C14/34;H01J37/34 主分类号 C23C14/34
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