发明名称 |
Thin-film formation system and thin-film formation process |
摘要 |
<p>In a thin-film formation process and system, a target and a substrate are placed in a sputtering space and a film-forming space, respectively, the pressure in the film-forming space is maintained at a pressure lower than the pressure in the sputtering space and a pressure sufficient for sputtered particles to move in the film-forming space with their mean free path which is longer than the distance between the grid plate and the substrate, and the target is sputtered to form a thin film on the substrate. <IMAGE></p> |
申请公布号 |
EP1184483(A2) |
申请公布日期 |
2002.03.06 |
申请号 |
EP20010120484 |
申请日期 |
2001.08.28 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
IWASE, HIDEO;KAMEYAMA, MAKOTO;KITANI, KOJI;HOSHI, YOICHI |
分类号 |
C23C14/34;C23C14/35;H01L21/203;H01L21/285;(IPC1-7):C23C14/34;H01J37/34 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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