发明名称 PRECHARGE CONTROL CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A precharge control circuit is provided to be capable of shortening a precharge time by limiting a difference between a low voltage level and a high voltage level into a minimum range being recognized by a main amplifier. CONSTITUTION: A local precharge control part(2) precharges local input/output lines(LIOT, LIOB) in response to a local precharge signal(LIOEQ) with the same voltage. A main precharge control part(3) precharges main input/output lines(MIOT, MIOB), connected to the local input/output lines via transfer gates. A voltage control part(5) is operated responsive to a read enable signal(READEN) of a main amplifier(4), and supplies a reference voltage(VREF), which is lower by 0.3V than a precharge voltage(VDL), to the main input/output lines(MIOT, MIOB). The voltage control part(5) maintains a voltage difference between a high voltage level of data and a low voltage level thereof so as to have a minimum value being recognized by a main amplifier(4).
申请公布号 KR20020016116(A) 申请公布日期 2002.03.04
申请号 KR20000049270 申请日期 2000.08.24
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JUN, BYEONG DEUK
分类号 G11C11/4091;(IPC1-7):G11C11/409 主分类号 G11C11/4091
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