| 摘要 |
PROBLEM TO BE SOLVED: To improve current distribution in a light emitting part composed of InGaAlP, and enhance light leading-out efficiency and luminance. SOLUTION: In this semiconductor light emitting device, a double heterojunction structure (light emitting region layer) which is composed of InGaAlP based material and sandwiches an active layer 13 by an N-type clad layer 12 and a P-type clad layer 14 is formed on an N-GaAs substrate 11, and a light is led out from a surface except an electrode 19 formed in a part on a surface on the side opposite to the substrate 11 to the light emitting region layer. Between the light emitting region layer and the electrode 19, an N-InGaAlP current blocking layer 16 whose size is nearly equal to the light leading-out electrode 19 and a current blocking layer 17 whose band gap is larger than the InGaAlP active layer 13 are formed from the light emitting region layer side. |
