发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To miniaturize an element without changing a manufacturing pattern, maintain performance and enable manufacturing at a low cost. SOLUTION: In a semiconductor device, a semiconductor layer 2 is formed on an insulating film 1, and an arbitrary number of semiconductor elements are formed on the semiconductor layer 2. The semiconductor layer is provided with an element region 3 for forming the semiconductor elements and potential leading-out regions 4a, 4b as thin semiconductor films which are collectively formed in self-alignment manner to the element region 3 and thinner than the element region.
申请公布号 JP2002064206(A) 申请公布日期 2002.02.28
申请号 JP20000301509 申请日期 2000.09.29
申请人 TOSHIBA CORP 发明人 YAMADA TAKASHI;ARAI HIDEAKI;KAWANAKA SHIGERU
分类号 H01L29/417;H01L21/3205;H01L21/331;H01L21/768;H01L21/8222;H01L21/8234;H01L21/8242;H01L21/8248;H01L21/8249;H01L23/52;H01L27/06;H01L27/08;H01L27/088;H01L27/108;H01L29/423;H01L29/43;H01L29/49;H01L29/73;H01L29/786 主分类号 H01L29/417
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