发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To miniaturize an element without changing a manufacturing pattern, maintain performance and enable manufacturing at a low cost. SOLUTION: In a semiconductor device, a semiconductor layer 2 is formed on an insulating film 1, and an arbitrary number of semiconductor elements are formed on the semiconductor layer 2. The semiconductor layer is provided with an element region 3 for forming the semiconductor elements and potential leading-out regions 4a, 4b as thin semiconductor films which are collectively formed in self-alignment manner to the element region 3 and thinner than the element region. |
申请公布号 |
JP2002064206(A) |
申请公布日期 |
2002.02.28 |
申请号 |
JP20000301509 |
申请日期 |
2000.09.29 |
申请人 |
TOSHIBA CORP |
发明人 |
YAMADA TAKASHI;ARAI HIDEAKI;KAWANAKA SHIGERU |
分类号 |
H01L29/417;H01L21/3205;H01L21/331;H01L21/768;H01L21/8222;H01L21/8234;H01L21/8242;H01L21/8248;H01L21/8249;H01L23/52;H01L27/06;H01L27/08;H01L27/088;H01L27/108;H01L29/423;H01L29/43;H01L29/49;H01L29/73;H01L29/786 |
主分类号 |
H01L29/417 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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