发明名称 |
Photoelectric conversion device |
摘要 |
An insulator is formed on a substrate, on which numerous first conductivity-type crystalline semiconductor particles are deposited on and brought into contact with the substrate. A second conductivity-type semiconductor layer for forming a PN-junction between the layer and the crystalline semiconductor particles is formed over the crystalline semiconductor particles and the insulator. The second conductivity-type semiconductor layer comprises a semiconductor layer including a crystalline semiconductor and an amorphous semiconductor in a mixed manner.
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申请公布号 |
US2002023674(A1) |
申请公布日期 |
2002.02.28 |
申请号 |
US20010866069 |
申请日期 |
2001.05.25 |
申请人 |
SUGAWARA SHIN;KYODA TAKESHI;ARIMUNE HISAO |
发明人 |
SUGAWARA SHIN;KYODA TAKESHI;ARIMUNE HISAO |
分类号 |
H01L25/00;H01L31/0352;H01L31/0384;H02N6/00;(IPC1-7):H02N6/00 |
主分类号 |
H01L25/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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