发明名称 |
Method for forming a barrier layer |
摘要 |
Methods and devices are disclosed utilizing a silicon-containing barrier layer. A method of forming a barrier layer on a semiconductor device is disclosed. A semiconductor device is provided. A silicon-containing material is deposited on the semiconductor device. The silicon-containing material is processed in a reactive ambient. The barrier layer can be made primarily oxide, primarily nitride or both by the reactive ambient selected. A semiconductor device is disclosed. The semiconductor device includes a substrate, a gate oxide, a silicon-containing barrier layer and a gate electrode. The gate oxide is formed over the substrate. The silicon-containing barrier layer is formed over the gate oxide by causing silicon atoms of a precursor layer react with a reactive agent. The gate electrode is formed over the silicon-containing barrier layer. Other embodiments utilizing a barrier layer are disclosed.
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申请公布号 |
US2002025658(A1) |
申请公布日期 |
2002.02.28 |
申请号 |
US20010898950 |
申请日期 |
2001.07.03 |
申请人 |
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发明人 |
POWELL DON CARL;MERCALDI GARRY ANTHONY;WEIMER RONALD A. |
分类号 |
H01L21/02;H01L21/28;H01L21/312;H01L21/314;H01L21/316;H01L21/318;H01L29/40;H01L29/51;H01L29/94;(IPC1-7):H01L21/36 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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