发明名称 AIGaAsSb/InP DISTRIBUTED BRAGG REFLECTOR
摘要 <p>A distributed Bragg reflector, or DBR (46), for a vertical cavity surface emitting laser, or VCSEL (44), includes alternating layers of different semiconductor materials to improve thermal and electrical characteristics for the VCSEL (44). Use of particular materials reduces the thermal resistivity of the DBR (46) and allows heat to dissipate quickly during operation of the VCSEL (44).</p>
申请公布号 WO2002017447(A1) 申请公布日期 2002.02.28
申请号 US2001026209 申请日期 2001.08.21
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