发明名称 |
Spin valve/GMR sensor using synthetic antiferromagnetic layer pinned by Mn-alloy having a high blocking temperature |
摘要 |
Disclosed are a spin valve magnetoresistive sensor and methods of fabricating the same. The sensor includes a free layer, a synthetic antiferromagnetic (SAF) layer, a spacer layer positioned between the free layer and the SAF layer, and a Mn-based antiferromagnetic pinning layer in contact wish the SAF layer. The SAF layer includes first and second ferromagnetic CoFe layers and an Ru spacer layer positioned between and directly in contact with the first and second CoFe ferromagnetic layers.
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申请公布号 |
US2002024780(A1) |
申请公布日期 |
2002.02.28 |
申请号 |
US20010907219 |
申请日期 |
2001.07.17 |
申请人 |
MAO SINING;MACK ANTHONY M.;EVERITT BRENDA A.;MURDOCK EDWARD S.;GAO ZHENG |
发明人 |
MAO SINING;MACK ANTHONY M.;EVERITT BRENDA A.;MURDOCK EDWARD S.;GAO ZHENG |
分类号 |
G01R33/09;G11B5/39;(IPC1-7):G11B5/39 |
主分类号 |
G01R33/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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