Transistor device of MOS structure in which variation of output impedance resulting from manufacturing error is reduced

摘要

A MOS (Metal Oxide Semiconductor) transistor includes a gate electrode, a drain electrode, and a source electrode. The MOS transistor has an on-state resistance when the MOS transistor is in an ON state. The MOS transistor further includes a specific electrode, wherein the specific electrode connects the source electrode to a power supply section to which a power is supplied. The specific electrode has a resistance substantially identical to the on-state resistance. The specific electrode has a width substantially identical to a width of the gate electrode. The specific electrode and the gate electrode are formed at a same time.