| 发明名称 |
Via RC improvement for copper damascene and beyond technology |
| 摘要 |
A new anneal procedure is provided that is applied to copper damascene via interconnects after copper ECP deposition and prior to copper planarization.
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| 申请公布号 |
US6350688(B1) |
申请公布日期 |
2002.02.26 |
| 申请号 |
US20000629646 |
申请日期 |
2000.08.01 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
LIU CHUNG-SHI;SHUE SHAU-LIN;YU CHEN-HUA |
| 分类号 |
C25D5/48;C25D5/50;C25D7/12;H01L21/768;(IPC1-7):H01L21/44;H01L21/476 |
主分类号 |
C25D5/48 |
| 代理机构 |
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代理人 |
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| 主权项 |
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