发明名称 |
Chemical-mechanical polishing of semiconductors |
摘要 |
A method for manufacturing an integrated circuit using damascene processes is provided in which planar surfaces of contacting conductive metal channels and vias are subjected to chemical-mechanical polishing under a pressure which avoids cold working and to two steps of chemical-mechanical polishing in which the first step is performed using a slurry with a first sized abrasive to expose a first dielectric layer in which the conductive metal channel is embedded and to provide a planar polished surface of the conductive material, and a second step is performed using a second slurry with a second sized abrasive larger than said first sized abrasive to provide a planar rough-polished surface of the conductive material. The second polishing also performed at a pressure which avoids cold working, which causes a highly polycrystalline structure and a high dislocation density, in the conductive material at its planar polished surface.
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申请公布号 |
US6350678(B1) |
申请公布日期 |
2002.02.26 |
申请号 |
US20000534906 |
申请日期 |
2000.03.23 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
PRAMANICK SHEKHAR;YANG KAI |
分类号 |
H01L21/321;H01L21/768;(IPC1-7):H01L21/476;H01L21/302;H01L21/44;H01L21/461 |
主分类号 |
H01L21/321 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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