POLISHING PAD, POLISHING DEVICE AND POLISHING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a polishing pad, a polishing device and a polishing method capable of speedily eliminating a global step difference by selectively polishing a protruded part of an irregularity on a semiconductor substrate surface in flattening of the semiconductor substrate by a CMP, reducing recessing quantity of dishing and thinning even in polishing in metallic wiring and an STI and providing the high quality semiconductor substrate with few scratch flaws and residual dust. SOLUTION: The polishing pad to be used for chemical mechanical polishing to flatten the substrate constitutes its characteristic feature of containing a polishing layer a contact angle with water of which is less than 75 degrees and to satisfy conditions of (A) and/or (B) shown hereinunder. (A) A flexural elastic modulus is more than 2 GPa. (B) Surface hardness is more than 80 in durometer D hardness.