METHOD FOR FORMING SEMICONDUCTOR DEVICE CAPABLE OF GUARANTEEING CONTACT AREA OF CHARGE STORAGE ELECTRODE AND PREVENTING SHORT CIRCUIT BETWEEN ADJACENT CHARGE STORAGE ELECTRODES

摘要

PURPOSE: A method for forming a semiconductor device is provided to effectively reduce a contact area and prevent a short circuit between adjacent charge storage electrodes, by making an insulation layer spacer not formed on the sidewall of a bit line and by making a short-circuit preventing insulation layer left only on the sidewall of a contact hole. CONSTITUTION: The bit line(21) is formed on a semiconductor substrate(20). An interlayer dielectric(24) is formed on the resultant structure, and is selectively etched to form the contact hole. The bit line is exposed to the sidewall of the contact hole, and the semiconductor substrate to be in contact with the charge storage electrode is exposed to the bottom surface of the contact hole. The short-circuit preventing insulation layer(25) is formed on the resultant structure having the contact hole, and is blank-etched to be left on the sidewall of the contact hole. A conductive layer(26) for the charge storage electrode is formed on the resultant structure.