发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To make compatible the high speed operation and low power consumption of a semiconductor device to operate with a low voltage. SOLUTION: In the semiconductor device having a circuit block, which has plural CMOS and has first and second operating states, and a means for controlling a threshold voltage of the CMOS into first threshold voltage state or second threshold voltage state corresponding to the respective first and second operating states, when a voltage (Vgs) between the gate and source of a P-MOS or N-MOS in the CMOS is defined as 0 V, the first threshold voltage state is set to make a current practically flow to the serially coupled source-drain passage of the CMOS and when the Vgs of a P-MOS or N-MOS in the CMOS is defined as 0 V, the second threshold voltage state is set not to make a current practically flow to the serially coupled source-drain passage of the CMOS.
申请公布号 JP2002057568(A) 申请公布日期 2002.02.22
申请号 JP20010151817 申请日期 2001.05.22
申请人 HITACHI LTD 发明人 NAKAGOME YOSHINOBU;ITO KIYOO
分类号 G11C11/407;H01L21/8238;H01L27/092;H03K19/0185;H03K19/094;(IPC1-7):H03K19/018;H01L21/823 主分类号 G11C11/407
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