| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device, in which leakage is suppressed and which has a trench element isolation region. SOLUTION: The manufacturing method of the semiconductor device, having the trench element separating area, includes processes (a) to (c), where the process (a) forms a trench 32 in a semiconductor layer 12; the process (b) forms an insulating layer 40 with which the trench 32 is filled and the process (c) thermally treats the insulating layer 40; and the temperature in thermal treatment is not less than 1,050 deg.C.
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