发明名称 |
Thin film resonators fabricated on membranes created by front side releasing |
摘要 |
<p>A new bulk resonator may be fabricated by a process that is readily incorporated in the traditional fabrication techniques used in the fabrication of monolithic integrated circuits on a wafer. The resonator is decoupled from the wafer by a cavity etched under the resonator using selective etching through front openings (vias) in a resonator membrane. In a typical structure the resonator is formed over a silicon wafer by first forming a first electrode, coating a piezoelectric layer over both the electrode and the wafer surface and forming a second electrode opposite the first on the surface of the piezoelectric layer. After this structure is complete, a number of vias are etched in the piezoelectric layer exposing the surface under the piezoelectric layer to a selective etching process that selectively attacks the surface below the piezoelectric layer creating a cavity under the resonator. <IMAGE></p> |
申请公布号 |
EP1180494(A2) |
申请公布日期 |
2002.02.20 |
申请号 |
EP20010306284 |
申请日期 |
2001.07.20 |
申请人 |
AGERE SYSTEMS GUARDIAN CORPORATION |
发明人 |
CHAN, EDWARD;KIM, JUNGSANG;HUGGINS, HAROLD ALEXIS;SOH, HYONGSOK |
分类号 |
H01L41/22;B81B3/00;H01L41/08;H03H3/02;H03H9/17;(IPC1-7):B81B3/00 |
主分类号 |
H01L41/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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