| 摘要 |
PURPOSE: A method for preventing a hemispherical grain(HSG) bridge using a nitride layer spacer is provided to prevent a bridge between HSG's while increasing capacitance, by growing an HSG on the inner and outer walls of a storage node of a capacitor. CONSTITUTION: A storage node contact(14) is formed on a substrate having a transistor and a landing pad(12). An oxide layer is deposited on the substrate having the storage node contact. The oxide layer is patterned, and the oxide layer corresponding to the upper portion of the storage node contact is etched to form a trench. A nitride layer is deposited in the trench region. The nitride layer is patterned, and the inside of the nitride layer is etched to form a nitride layer spacer. An amorphous silicon layer(17) is deposited on the substrate having the nitride layer spacer. A planarization layer is filled in the trench region surrounded by the amorphous silicon layer. The planarization layer and the amorphous silicon layer are planarized. The planarization layer is removed to make the trench region surrounded by the amorphous silicon layer an empty space. The nitride layer spacer is eliminated. A HSG(20) is grown on the amorphous silicon layer.
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