| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor epitaxial wafer, in which an attempt is made to prevent a current gain from lowering by decreasing a recombination near an emitter layer; and a heterobipolar transistor. SOLUTION: In a heterojunction bipolar transistor, in which a GaAs base layer 14 and a GaAs emitter cap layer 12 are formed on a GaAs substrate 17 via an InGaP emitter layer 13, an interface between the InGaP emitter layer 13 is doped with a prescribed amount of Se; and the GaAs emitter cap layer 12 and GaAs base layer 14, whereby recombinations near the InGaP emitter layer 13 are decreased.
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