| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having reduced interconnection capacitance, and to provide manufacturing method therefor. SOLUTION: The semiconductor device 100 comprises an interlayer insulation layer 20, formed on a first interconnection layer 14 and having an opening 60 reaching the first interconnection layer 14. The opening 60 has a through-hole 62 and an interconnection trench 64 which is continuous with the through-hole 62. A contact layer 92 is provided in the through-hole 62, and a second interconnection layer 94 is provided in the interconnection trench 64. The interlayer insulation layer 20 comprises a first insulation layer 30, a second insulation layer 50 formed on the first insulation layer 30, and an intermediate layer 40 formed between the first insulation layer 30 and the second insulation layer 50. The first insulation layer 30 is a porous film of an organic material. |
