| 摘要 |
PURPOSE: To overcome a problem of a noise which is generated by leaking electrons from a floating node to a photodiode when the potential of the floating node is turned to 0V in non-selection. CONSTITUTION: In the MOS type solid-state image pickup device with the matrix array of a unit pixel 10 having a photodiode 11, a transfer transistor 12 for transferring the signal of this photodiode 11 to a floating node N11, an amplifier transistor 13 for outputting the signal of the floating node N11 to a vertical signal line 22 and a reset transistor 14 for resetting the floating node N11, a P-type MOS transistor 26 is connected between a drain line 23, to which the drain of the reset transistor 14 is connected, and a V shift register 25 for selectively applying a reset voltage to this drain line 23 and in non-selection, the potential of the floating node N11 is set to the channel voltage of the P-type MOS transistor 26.
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