| 发明名称 |
FIELD EFFECT TRANSISTOR CONFIGURATION HAVING A HIGH LATCH-UP STRENGTH AND METHOD FOR THE PRODUCTION THEREOF |
| 摘要 |
The invention relates to a field effect transistor configuration in which the source region (6), in order to increase the latch-up strength, extends along a trench (2) and below the highly doped base region (8) in a self-adjusting manner. |
| 申请公布号 |
WO0165606(A3) |
申请公布日期 |
2002.02.14 |
| 申请号 |
WO2001DE00617 |
申请日期 |
2001.02.14 |
| 申请人 |
INFINEON TECHNOLOGIES AG;NEIDHART, THOMAS;SCHAEFFER, CARSTEN;SCHAGERL, GUENTER |
发明人 |
NEIDHART, THOMAS;SCHAEFFER, CARSTEN;SCHAGERL, GUENTER |
| 分类号 |
H01L21/265;H01L21/331;H01L21/336;H01L29/08;H01L29/417;H01L29/423;H01L29/739;H01L29/78 |
主分类号 |
H01L21/265 |
| 代理机构 |
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代理人 |
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