发明名称 Semiconductor device
摘要 An SDRAM has its operation mode selected to be the SDR mode in response to the first state of the external terminal (OPT), thereby releasing data, which has been read out of a memory mat, in response to a clock signal produced by a clock regenerating circuit having a function of comparing the phases of the input and output of the circuit, or selected to be the DDR mode in response to the second state of the external terminal (OPT), thereby releasing data, which has been read out of the memory mat, in response to a clock signal produced by a clock signal generation circuit in synchronism with an external clock signal.
申请公布号 US2002018396(A1) 申请公布日期 2002.02.14
申请号 US20010964669 申请日期 2001.09.28
申请人 MORITA SADAYUKI;SAKATA TAKESHI;HANZAWA SATORU;SONODA TAKAHIRO;TADOKORO HARUKO;ICHIKAWA HIROSHI;NAGASHIMA OSAMU 发明人 MORITA SADAYUKI;SAKATA TAKESHI;HANZAWA SATORU;SONODA TAKAHIRO;TADOKORO HARUKO;ICHIKAWA HIROSHI;NAGASHIMA OSAMU
分类号 G11C11/407;G11C7/10;G11C7/22;G11C11/401;G11C11/4076;(IPC1-7):G11C7/00 主分类号 G11C11/407
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